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| 1999/09-2003/07，内蒙古大学，数理基地班，学士 2003/09-2006/07，东北师范大学，物理系，硕士 2012/09-2016/07，哈尔滨工业大学，理学院物理系，博士 2006/09-2011/07，黑龙江八一农垦大学，文理学院，讲师 2016/07-至今， 哈尔滨师范大学，光电带隙材料教育部重点实验室，讲师 2017/07-2017/08，The International Centre for Theoretical Physics (ICTP)，意大利，交流访学 2018/08-2019/08，The University of Oklahoma，美国，访问学者 2020/09-2021/07，清华大学，化工学院，访问学者 |
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| 1、半导体材料晶体、电子结构、电子输运性质； 2、储能材料结构及其电荷存储机制及其动力学。 |
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| 1、第一性原理计算； 2、储能机制及分子动力学模拟。 |
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1、国家自然科学基金国际交流与合作项目，量子输运基础研讨与讲习, 2017/07-2017/12，已结题，主持人. 2、国家自然科学基金面上项目，过渡金属碳化物电极材料的设计、可控合成、Li+离子嵌入及其电化学储能特性研究，2015/01-2018/12，参加人. 3、国家自然科学基金面上项目，基于3D MXene纳米结构构筑Li-S电池的正极材料及其电化学性能的研究，2018/01-2021/12，参加人. |
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科研论文： 1. Wen, J.; Zhang, W.; Zhang, L.; Zhang, X.; Yu, Y.-X., Identification of the different contributions of pseudocapacitance and quantum capacitance and their electronic-structure-based intrinsic transport kinetics in electrode materials. Chem Phys Lett 2021, 775, 138666 2. Wen, J.; Fu, Q.; Wu, W.; Gao, H.; Zhang, X.; Wang, B., Understanding the Different Diffusion Mechanisms of Hydrated Protons and Potassium Ions in Titanium Carbide MXene. ACS Applied Materials & Interfaces 2019, 11 (7), 7087-7095. 3. Wen, J.; Zhang, X.; Gao, H., Role of the H-containing groups on the structural dynamics of Ti3C2Tx MXene, Physica B: Condensed Matter, 2018, 537, 155–161 4. Wen, J.; Zhang, X.; Gao, H., Structural formation and charge storage mechanisms for intercalated two-dimensional carbides MXenes. Phys Chem Chem Phys 2017, 19 (14), 9509-9518. 5. Wen, J.; Zhang, X.; Gao, H, Intrinsic non-ohmic electronic transport properties of the transparent In-Zn-O compound nanobelts under the ohmic contact and out of the space charge limited transport region. Nanotechnology 2016, 27 (7), 075703. 6. Wen, J.; Zhang, X.; Gao, H., Effects of the slab thickness on the crystal and electronic structures of In2O3(ZnO)m revealed by first-principles calculations. Journal of Solid State Chemistry 2015, 222 (0), 25-36. 7. Wen, J.; Zhang, X.; Gao, H.; Wang, M., Current–voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure. Journal of Applied Physics 2013, 114 (22), 223713. 8. Wen, J.; Wu, L.; Zhang, X., A unique arrangement of atoms for the homologous compounds InMO3(ZnO)m (M = Al, Fe, Ga, and In). Journal of Applied Physics 2012, 111 (11), 113716. 9. Wen, J.; Zuo, C. Y.; Xu, M.; Zhong, C.; Qi, K., First-principles investigation of electronic structure and optical properties in N-F codoped ZnO with wurtzite structure. European Physical Journal B 2011, 80 (1), 25-30. 10. Wen, J.; Zuo, C.; Zhong, C., Calculation of the Change in the Madelung Energy of Doped ZnO. Chinese Journal of Physics 2010, 48 (6), 844-854. 11. Wen, J.; Zuo, C. Y.; Zhong, C., First-principles investigations of electronic structures and optical properties in wurtzite Zn16O13N2F and Zn14O15Ag2F. Chinese Optics Letters 2011, 9 (1), 11601. 教改论文： 1. 温静，平面波在各向异性晶体中的菲涅耳公式. 光学学报, 2009, 29(7): 2000～2005. 2. 温静，干涉仪在分光计调整中的应用. 光学仪器, 2008, 30(4):32~35 3. 温静，光的干涉在水平调节及长度测量中的新应用. 物理与工程, 2008,18(6):25~275 4. 温静，非物理专业普及近代物理实验的研究. 实验科学与技术, 2009, 7(2):104~1065 学术专著： 温静，张喜田等，《密度泛函理论在材料计算中的应用》, 人民邮电出版社, 2022 |
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